iDEAL Semiconductor has officially brought its SuperQ™ silicon power technology into full production, debuting a new generation of 150 V and 200 V MOSFETs with what it claims are the industry’s best figures of merit. This marks the first major architectural leap in silicon MOSFET design in over 25 years, setting the stage for higher efficiency, faster switching, and lower resistance in power applications.
SuperQ technology fundamentally redefines how silicon MOSFETs handle power by nearly doubling the n-conduction region — up to 95% — while slashing switching losses by as much as 2.1 times compared to current industry offerings. The first device to hit the market is the iS15M7R1S1C, a 150 V, 6.4 mΩ MOSFET housed in a compact 5 x 6 mm PDFN surface-mount package. Designed for reliability and ease of integration, this unit includes exposed leads for improved assembly and board-level strength.
Alongside the production launch of the 150 V family, iDEAL is sampling its 200 V line, headlined by the iS20M6R1S1T. This 6.1 mΩ MOSFET, packaged in an 11.5 x 9.7 mm TOLL, offers a 10% lower RDSon) than the best device currently available, and 36% lower than the next-best competitor. Devices in this series will also be available in other standard formats including TO-220, D2PAK-7L, and PDFN, making them drop-in compatible across existing designs.
Upcoming 300 V and 400 V SuperQ platforms are expected to continue this performance trend, targeting applications that have long been underserved by conventional silicon technologies. With dramatically lower on-resistance and minimal switching losses, iDEAL aims to unlock new potential for high-efficiency designs across sectors such as AI data centers, industrial automation, and electric mobility.
Mark Granahan, CEO and co-founder of iDEAL Semiconductor, emphasized the significance of this step. “For the past quarter-century, the industry has relied on Reduced Surface Field (RESURF) technologies like Superjunction, but these architectures’ performance has plateaued. To achieve the necessary gains in power delivery and efficiency, a new architecture is required and that is SuperQ.”
Engineered and manufactured in the United States, iDEAL’s MOSFETs are optimized for seamless integration across voltage classes from 150 V to 400 V and are suited for future expansions in diodes, IGBTs, and power ICs. The company’s ambition is clear: establish SuperQ as the cornerstone for the next wave of global power electronics.
